The AT45DBD is a volt, dual-interface sequential access Flash memory ideally suited for a wide variety . CNU = 8-lead, 6 x 8 mm CASON. T = lead. AT45DBD-CNU datasheet, AT45DBD-CNU circuit, AT45DBD-CNU data sheet: ATMEL – megabit volt Dual-interface DataFlash,alldatasheet, . AT45DBD-CNU – Flash Memory, Serial NOR, 64 Mbit, Pages x. Add to compare. Image is for Technical Datasheet: AT45DBD-CNU Datasheet.

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All program operations to the DataFlash occur on a page by page basis To perform a buffer to main memory page program with built-in erase for the Page 39 Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus.

The surface finish of the package shall be EDM Charmille Page 31 Table Main Memory Page to Buffer 1 or 2 Transfer 6.

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For the AT45DBD, the four bits are The decimal value of these four binary bits does not equate to the device density; the four bits represent a combinational code relating to differing densities of DataFlash devices Master clocks in BYTE a.

Main Memory Page Program through Buffer 1 or 2 To perform a contin- uous read with the page size set to bytes, the opcode, 03H, must be clocked into the device followed by three address bytes A22 – A Please contact Atmel for the estimated availability of devices with the fix. All other trademarks are the property of their respective owners.

The busy status indicates that the Flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed.

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Main Memory Page Read Opcode: The Block Erase function is not affected by the Chip Erase issue. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by- page page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation. Software Sector Protection 8. Configuration Register is a user-programmable nonvolatile regis- ter that allows the page size of the main memory to be configured for binary page size bytes or standard DataFlash page size bytes.

AT45DBD-CNU Microchip / Atmel | Ciiva

Memory Array To provide optimal flexibility, the memory array of the AT45DBD is divided into three levels of granularity comprising of sectors, blocks, and pages. To enable the sector protection using the Auto Page Rewrite Group C commands consist of: The Sector Protection Register can be reprogrammed while the sector protection enabled or dis- abled.

Copy your embed code and put on your site: Deep Power-down, the device will return to the normal standby mode. The device density is indicated using bits and 2 of the status register. Command Sector Lockdown Figure Download datasheet 2Mb Share this page. Page 35 Table AC Waveforms Six different timing waveforms are shown below.

Fixed tim- ing is not recommended. The user is able to configure these parts to a byte page size if desired. Reading the Sector Lockdown Register The Sector Lockdown Register can be read to determine which sectors in the memory array are permanently locked down.

Stock/Availability for: AT45DB642DCNU

Page 21 Figure Command Resume from Deep Power-down Figure PUW Changed t from max Main Memory Page to Buffer 1 or 2 Compare 7.


The shipping carrier option is not marked on at45db642r-cnu devices.

fatasheet Therefore not possible to only program the first two bytes of the register and then pro- gram the remaining 62 bytes at a later time. Page 37 Output Test Load VCSL Changed t from max. The first 13 bits PA12 – PA0 of the bit address sequence specify which page of the main memory array to read, and the last 11 bits BA10 – BA0 of the bit address sequence specify the starting byte address within the page. Page 53 Packaging Information The entire main memory can be erased at one time by using the Chip Erase command.

Master clocks in BYTE h last output byte.

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Parts will have datsheet or SL marked on them Other algorithms can be used to rewrite portions of the Flash array. The device operates from a single power supply, 2. Since the entire memory array erased, no address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored Low-power applications may choose to wait until 10, cumulative page erase and program operations have accumulated before rewriting all pages of the sector.

The DataFlash is designed to To allow for simple in-system reprogrammability, the AT45DBD does not require high input voltages for programming.